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Co/Pt multilayers were proposed as a new promising media for Nanomagnet Logic computing. Modeling of irradiated Co/Pt films is challenging as Focused Ion Beam (FIB) irradiation locally changes the magnetic properties of the Co/Pt film. We implemented a computational model of partially irradiated nanodots and explained how to exploit asymmetric coupling for designing nanowires and logic gates.
We have fabricated vertical nanogap electrode devices based on Silicon-on-Insulator (SOI) substrates for investigating the electronic transport properties of long, conjugated molecular wires. Our nanogap electrode devices comprise smooth metallic contact pairs situated at the sidewall of an SOI structure, obtained by selective recess-etching a few nanometers thin buried oxide layer and subsequent...
In this article, a novel method of creating p- and n-type Si-NWs FETs by employing undoped NWs as the active region, is presented. This method does not require doping, but takes advantage of the inherent NW geometry and simply relies on the electrostatic control of the bands near the source- and drain- (S/D) contacts.
An extensive gate-length (LG) dependent electrical characterization of silicon nanowire (NW) field effect transistors (FET) is presented here. Catalytically-grown and nominally undoped Si-NWs were integrated as the active region of FETs, upon which fully silicided Schottky source and drain contacts were fabricated. The length of the active region was shortened by a desired value, through the lateral...
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