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A novel LC bias topology is proposed to improve the phase noise of VCO IC for ultra-low-voltage applications. The LC bias circuit works as an impedance transformation network, which improves the phase noise of VCO by delivering higher power to the gates of the cross-coupled transistors. A 2-GHz-band ultra-low-voltage VCO IC with the novel LC bias circuit has been designed, fabricated and fully evaluated...
A novel 2.2-GHz-band ultra-low-voltage Class-C PMOS VCO IC with negative reference and amplitude feedback loop is proposed. The negative reference initially adapts a sufficient bias for the LC-VCO circuit to ensure a robust oscillation start-up. The feedback loop then adaptively controls the bias condition of LC-VCO for Class-C operation in steady-state. The reliability of the feedback loop is enhanced...
This paper presents a fully integrated class-E power amplifier IC with body effect to achieve high efficiency and high gain at low supply voltage for 2.5-GHz band short range wireless communication systems. The class-E amplifier IC is designed, fabricated and fully evaluated in 180-nm CMOS. The proposed power amplifier IC exhibits a small-signal gain of 10.8 dB and a saturated output power of 10.8...
A miniaturized broadband balun IC in 180-nm CMOS is presented for millimeter-wave applications. The balun IC is designed so that high impedance ratio between the even and odd modes is achieved by utilizing Electro-magnetic solver suitable for planer structure. The fabricated balun IC in 180-nm CMOS process occupies only 0.03 mm2. The balun IC exhibits an amplitude imbalance of less than 0.9 dB and...
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