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Bilayer metal/insulator/insulator/metal (MIIM) diodes of HfO2 and Al2O3 using asymmetric metal gates are investigated for their susceptibility to trap charge. Comparing the effects of constant current electrical stressing for varying thicknesses of insulators, the authors have formulated an adaptation of the Fowler-Nordheim derivative method such that an estimate of the charge centroid location can...
The performance and stability of metal/insulator/metal tunnel diodes was investigated as a function of interfacial roughness using Al, Ir, Pt, and ultra-smooth amorphous multi-metal (ZrCuAlNi) bottom electrodes with uniform Al2O3 tunnel dielectrics deposited via atomic layer deposition. Current density versus field behavior and device yield were found to be a function of interfacial roughness with...
Thin-film transistors (TFTs) fabricated using amorphous oxide semiconductors (AOS) exhibit good electron mobility (5 to >; 50 cm2/V · s), they are transparent, and they can be processed at low temperatures. These new materials show a great promise for high-performance large-area electronics applications such as flexible electronics, transparent electronics, and analog current drivers for organic...
New amorphous oxide semiconductor transparent thin film transistors (TTFTs) exhibit good mobility (5 to >50 cm2/V-sec), are transparent, and can be processed at low temperatures. They show great promise for high performance large area electronics applications such as flexible electronics, transparent electronics, and analog current drivers for OLED displays. An overview of TFT operation, expected...
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