Search results for: Shigetaka Tomiya

Items from 1 to 6 out of 6 results

article

Numerical analysis for predicting the operability window of slot-die coating onto porous media

Tomomi Goda, Yuichi Sasaki, Mamoru Mizuno, Kazuhiko Morizawa, more

Journal of Coatings Technology and Research > 2017 > 14 > 5 > 1053-1060

The ability to coat porous media is critical for forming composite functional thin films. A major technical concern for accurately predicting this process is that the flow of the coating bead and the penetration process must be considered. These phenomena strongly influence each other. Therefore, both the flow into porous media and the coating-bead flow should be simultaneously treated. In this study,...

article

Organic Single‐Crystal Arrays from Solution‐Phase Growth Using Micropattern with Nucleation Control Region

Osamu Goto, Shigetaka Tomiya, Yosuke Murakami, Akira Shinozaki, more

Advanced Materials > 24 > 8 > 1117 - 1122

A method for forming organic single‐crystal arrays from solution is demonstrated using an organic semiconductor, 3,9‐bis(4‐ethylphenyl)‐peri‐xanthenoxanthene (C₂Ph‐PXX). Supersaturation of C₂Ph‐PXX/tetralin solution is spatially changed by making a large difference in solvent evaporation to generate nuclei at the designated location. The method is simple to implement since it employs only a micropattern...

article

Effect of Crystal Orientation on Mechanically Induced Sn Whiskers on Sn-Cu Plating

Yukiko Mizuguchi, Yosuke Murakami, Shigetaka Tomiya, Tadashi Asai, more

Journal of Electronic Materials > 2012 > 41 > 7 > 1859-1867

Mechanically induced Sn whiskers formed on Sn-2%Cu plated on Cu with Ni underplating were examined by scanning electron microscopy and electron backscatter diffraction. The results revealed that Sn grains became larger under mechanical stress due to recrystallization and/or grain growth. The notable feature was formation of many twin interfaces. Most twin boundaries were {301}, and there were approximately...

article

Structural Defects and Degradation Phenomena in High-Power Pure-Blue InGaN-Based Laser Diodes

Shigetaka Tomiya, Osamu Goto, Masao Ikeda

Proceedings of the IEEE > 2010 > 98 > 7 > 1208 - 1213

To improve the lifetime of high-power pure-blue InGaN-based laser diodes, the need to reduce the number of newly created structural defects in active regions, consisting of multiple quantum well structures, is inevitable. We first report on detailed structural analyses of these new types of defects and discuss their formation mechanisms and reduction methodologies. We then fabricated laser diodes...

article

GaN-based high-power laser diodes

Takao Miyajima, Hiroshi Yoshida, Katsunori Yanashima, Takashi Yamaguchi, more

Materials Science & Engineering B > 2001 > 82 > 1-3 > 248 - 252

We report our recent progress on GaN-based laser diodes (LDs) which will be applied as a light source in high-density optical storage systems. Recently we achieved a lifetime of more than 500 hours under continuous-wave operation with a constant power 20 mW at 25 ^o C using GaN-based LDs with a standard ridge structure. We also report the potential of GaN-based LDs with another structure of...

article

Properties of GaN-based laser diodes with a buried-ridge structure

Tsunenori Asatsuma, Hiroshi Nakajima, Shigeki Hashimoto, Takashi Yamaguchi, more

Journal of Crystal Growth > 2000 > 221 > 1-4 > 640-645

The buried-ridge structure was introduced to GaN-based laser diodes for the purpose of realizing an index-guided structure in order to control the difference of effective refractive indexes between the inside and outside of the lasing area and to stabilize the lasing mode. Low-temperature-grown Al _x Ga ₍ ₁ _- _x ₎ N was used as the burying layer, and it was found that...

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Search results for: Shigetaka Tomiya

Numerical analysis for predicting the operability window of slot-die coating onto porous media

Organic Single‐Crystal Arrays from Solution‐Phase Growth Using Micropattern with Nucleation Control Region

Effect of Crystal Orientation on Mechanically Induced Sn Whiskers on Sn-Cu Plating

Structural Defects and Degradation Phenomena in High-Power Pure-Blue InGaN-Based Laser Diodes

GaN-based high-power laser diodes

Properties of GaN-based laser diodes with a buried-ridge structure

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