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We report that the bandgap of 2D few layer black phosphorus (BP) can be electrically tuned by applying a perpendicular electric/displacement field. The variation of bandgap is as large as 200 meV with 2V/nm displacement field. The bandgap modulation can be understood with the quantum confined stark effect within the SiO2/BP/boron nitride (BN) sandwiched structure. This unique material property provides...
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