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Millimeter-wave Distributed Active Transformer (DAT), baluns and zero degree 1–4 splitter have been optimized to design a 60 GHz parallel Power Amplifier (PA). The implementation is based on a thin digital 7 metal layers (1P7M) Back End of Line (BEOL) and Low Power (LP) transistors in 65 nm CMOS technology from STMicroelectronics. A lumped model based analysis is presented to compare pure voltage...
A two-stage single-ended Power Amplifier (PA) is fabricated for the 60GHz Wireless Personal Area Network (WPAN) standard. It is based on the 65nm CMOS technology from STMicroelectronics. The PA is biased in class A and uses distributed elements to perform impedances matching. S-parameters and large signal simulations are validated by measurement results. Load pull measurements are performed to get...
A fully integrated Power Amplifier (PA) is fabricated for the 60GHz Wireless Personal Area Network (WPAN). It is based on the 65nm CMOS technology from STMicro-electronics. The PA is matched without serial transmission lines (T-Lines) to reach good performances and low die area. S-parameters and load pull measurement results are demonstrated and compared with electromagnetic simulations for the power...
Design and optimization of 65nm CMOS passive devices which are used in the implementation of a 60GHz Power Amplifier (PA) are presented. The targeted application is the low cost Wireless Personal Area Network (WPAN). A new optimized Radio Frequency (RF)-pad is used to minimize the losses of the PA access. The PA is matched via balun and Transmission Lines (T-Lines). T-Lines ensure both broadband inter-stage...
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