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The proposed method of depth control of the damaged layer of the polished wafers, based on application of Auger spectroscopy with the precision sputtering of the surface silicon layers and registration of the Auger electrons yield intensity from the wafer surface. The method makes it possible to perform the efficient depth control of the damaged layer and thus ensures the reliable control under the...
The issues of development and production of SOI CMOS VLS SRAM with information capacity of 256K, 1M and 4M, resistant to influence of external factors are considered.
Analysis is conducted regarding the methods of enhancing CMOS LSI radiation hardness. The examples of CMOS LSI show, that the schematic methods are the most prospective from the point of view of ensuring reliability and radiation hardness.
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