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We investigated amorphous silicon carbide (a-SiC:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) as protective coatings for harsh environment applications. The influence of the deposition parameters on the film properties was studied. Stoichiometric films with a low tensile stress after annealing (<50MPa) were obtained with optimized parameters. The stability of a protective...
A new sacrificial layer technology for the fabrication of silicon carbide (SiC) based micro electro mechanical systems (MEMS) is described using silicon germanium (SiGe) as sacrificial material. An extremely high etch selectivity between SiC and SiGe of up to 1:1000000 was achieved when using chlorine trifluoride (ClF3) as etchant in a dry plasmaless etch process. This enormous selectivity enables...
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