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We present <110> planar, self-aligned, twin-free, and high mobility GaAs semiconductor nanowires grown on (100) GaAs substrates. In addition, such planar nanowires are directly transfer-printable and naturally integratable with existing processing technology and photonic and electronic device designs.
We demonstrate for the first time, a metal-semiconductor field-effect transistor (MESFET) fabricated with a selfassembled and high mobility <110> GaAs planar nanowire (NW) channel. The planar NWs were grown on GaAs (100) substrates with metalorganic chemical vapor deposition (MOCVD) through gold (Au) catalyzed vapor-liquidsolid (VLS) mechanism. Unlike conventional out-of-plane <111> NWs,...
We demonstrate the first metal-semiconductor field-effect transistor with a self-assembled planar lang110rang GaAs nanowire channel. Well-defined dc output and transfer characteristics have been observed with a subthreshold slope of ~150 mV/dec, maximum gm of 23 mS/mm, and excellent on-current saturation. Bulklike mobility of ~4100 cm2/Vmiddots with corresponding electron concentration of 2.3middot10...
We report here the controlled growth and characterization of self-aligned and in-plane GaAs nanowires grown on GaAs (100) substrates with metalorganic chemical vapor deposition (MOCVD) and Au metal catalysts.
The growth of self-aligned planar GaAs nanowires on GaAs (100) substrates is demonstrated using Au-catalyzed metalorganic chemical vapor deposition (MOCVD). The effect of growth temperature on nanowire orientation and the growth mechanism are discussed.
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