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As technology feature sizes decrease, single event upset (SEU), digital single event transient (DSET), and multiple bit upset (MBU) effects dominate the radiation response of microcircuits in space applications. Even in high-altitude and terrestrial applications, cosmic-ray neutron recoil byproducts can easily produce an unacceptable soft error rate (SER) in modern microcircuits. Process modifications...
Recent measurements of the SEU (single-event upset) cross-section for 6 T SRAMs fabricated in a nano-scale commercial CMOS process were performed. Results indicated that the dominant upset mechanism was associated with multiple-cell upsets (MCUs) strikes on PMOS transistors. The dominance of the MCU cross section favors the use of a block architecture with widely spaced word bits and the use of EDAC...
As technology feature sizes decrease, single event upset (SEU), digital single event transient (DSET), and multiple bit upset (MBU) effects dominate the radiation response of microcircuits. Recent test circuits and test methods have quantified the pulse widths of DSETs generated from heavy-ion strikes on critical microcircuit nodes. These pulse widths have proven to be much larger than previously...
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