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We describe a 0.18/0.5 um RF CMOS thick Silicon-On-Insulator (SOI) technology built on high resistivity (1 kOhm-cm) substrates. A high performance/high power RF MEMS contact switch can also be integrated in the technology through above-IC post-processing. This RFCMOS/MEMS integrated technology provides a platform for cost-effective monolithic integration of several RF RX/TX functions for next generation...
The rapid thermal annealing temperature dependence of solid phase epitaxial recrystallization and incorporation of Er-implanted silicon has been studied. It was observed that the initial recrystallization is epitaxial, followed by a disruption of regrowth in the doped region for the samples irradiated with 350 keV and 150 keV Er ions to doses of 1 10 15 cm -2 and 7 10...
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