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We theoretically discovered and experimentally manifested that the carrier population inversion in graphene results in stimulating emission of plasmons with a giant gain, leading to superradiant terahertz lasing from a structured graphene.
Various photonic devices covering passive to active functions have been developed and monolithically-integrated on a silicon wire waveguide platform. Obstacles to practical applications are being eliminated by applying state-of-art fabrication technologies and unique device designs.
We describe our recent progress in Si photonic integration technology focusing on the monolithic integration of a germanium photodetector and a silicon-wire-waveguide variable optical attenuator.
Ge p-i-n photodiodes integrated with Si variable optical attenuators exhibit low dark current of 60 nA and high responsivity of 0.85 A/W at -1 V. These Ge photodiodes have potential for monolithic integration with other Si photonic components.
Silicon photonic wire waveguides, featuring a very strong optical confinement and compatibility with silicon electronics, provide a compact photonic platform on which various passive, dynamic and active devices can be constructed.
The authors experimentally observed the fast relaxation and relatively slow recombination dynamics of photogenerated electrons/holes in an epitaxial graphene heterostructure. The result well supports the occurrence of negative dynamic conductivity leading to the population inversion to making a new type of THz lasers.
Nonlinear optical phenomena are remarkably enhanced in silicon photonic wire waveguides with ultra-small cores. Efficient nonlinear functions, such as a wavelength conversion and high-purity entangled photon pair generation, are demonstrated.
Silicon photonics technologies are potentially useful in quantum information and communication experiments. This talk describes the first entangled photon-pair generation experiment to use a silicon wire waveguide, and discusses the application of silicon-based entanglement sources in quantum communication systems.
We reported the first entanglement generation experiments using a silicon wire waveguide. In our experiments, we used a 1.09-cm long, 460-nm wide, and 220-nm thick waveguide that was fabricated from a silicon-on-insulator wafer. The waveguide loss was 3.1 dB, and the effective area calculated using a mode solver was 0.04 mum2 . We hope that our work will constitute a bridge between the silicon photonics...
We report the fabrication of spot-size converters to efficiently connect a rib-type silicon wire waveguide with an optical fiber. The spot-size converter consists of a channel-type Si inverse taper core without a slab section and a SiOx waveguide that covers the taper. To make the Si taper core, we eliminate the Si slab at the end of the rib waveguide using a two-step etching process. The coupling...
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