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A trade-off property of CuSiN between EM improvement and line resistance increase was resolved by a breakthrough that leaves oxygen at grain boundary of Cu line surface before CuSiN formation. Then, the combination of CuSiN and Ti-rich TiN (Ti(N)) barrier metal (-BM) was applied. Oxygen left by weakening process strength of CuOx reduction lowered line resistance, because Si diffusion causing line...
Silicide-cap for Cu interconnects is promising for enhancing electromigration (EM) performance for 32 nm-node and beyond. But the trade-off properties of silicide-cap between line resistance and EM lifetime remain to be resolved. Increasing of line resistance is caused by Si diffusion in Cu line. So, we focused on Ti barrier metal (BM), which diffuses in Cu line, and applied it in combination with...
Electromigration (EM)-derived void nucleation and growth in 65-nm-node dual-damascene interconnects were investigated, and the effects of impurity doping as well as copper adhesion strength to a capping-dielectric layer (CAP) are clarified. It is found that surface-reductive treatment of the copper line improves its adhesion to the SiCN-CAP, elongating the incubation time of voiding at the via bottom...
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