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A single-event transients (SETs) tolerant LC-tank oscillator was designed, simulated, and fabricated using CMOS 90 nm technology. The simulation and experimental results indicate that the bias current of the oscillator greatly affects the SET-tolerance of an LC-tank oscillator. Adding a decoupling resistor to the bias circuit is an effective way to mitigate the effect of SETs to the oscillator. Laser...
To mitigate the single-event effect, improve the stability and also maintain the low power characteristic of sub-threshold SRAM, a dual interlocked storage cell (DICE) based SRAM cell in 90 nm CMOS technology was proposed to eliminate the drawback of conventional DICE cell during read operation. In order to make the proposed SRAM cell work under different power supply voltages from 0.3 V to 0.6 V,...
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