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Defect elimination from the Spacers and Junctions modules has been shown to increase yield in 20 nm HVM (high volume manufacturing). However, other defects such as surface particles and lifted pattern were also found in these modules. These defects formed voids downstream and later were filled with metals in the RMG (replacement metal gate) process. Therefore, these defects also need to be eliminated...
Dry oxide removal techniques are used as pre-spacer cleans to remove sidewall oxide (without undercutting the gate oxide and maintaining the gate CD (critical dimension)) in 20 nm HVM (high volume manufacturing). This results in arsenic containing residues on the wafer surface. Dry etch, although effective in accomplishing most of the desired process objectives, is not effective in removing arsenic,...
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