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In this paper, relationship between transient response of conductivity of tin oxide gas sensor and hydrogen concentration is described. Transient response is caused with periodical temperature changes. Theoretical part is based on Langmuir theory of adsorption and barrier theory of semiconductor. The theory was experimentally proven.
SnO2 thin film sensor was fabricated with microelectronic technology and NH3 (ammonia) gas sensing characteristics were measured in a temperature range 200-375degC. It was observed that surface doping with platinum improves significantly the material's sensitivity to ammonia, and the optimal operational temperature of the sensor was 325degC. The sensor showed high sensitivity to low NH3 concentration...
The effect of humidity on tin oxide thin film gas sensors has been studied in the case of methane. We found that the sensor resistance and response to methane are dramatically increased at decreasing of humidity. The results are qualitatively explained under the assumption that water molecules dissociate on the SnO2 surface, produce hydroxyl species capable of acting as electron donors and decrease...
This paper describes a semiconductor gas sensor and a portable device for the simultaneous determination of the composition of three gas components. The device consists of a gas chamber and an electron device, which includes a measurement module, microprocessor block and an indicator. The device can be used in control systems for emergency prevention in metal mining industry and chemical, oil and...
Photoluminescence has been measured from 100 to 300nm epitaxial thin films of MnF 2 prepared on Si(111) substrates and having α-PbO 2 orthorhombic structural type. The dominant luminescence consists of a broad band peaking around 575nm with a gradual tail extending to longer wavelengths. Weak spectral line features are observed on the short-wavelength side of the main band and are...
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