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In this work, current noise measurements of submicron InGaAs/InAlAs recessed planar diodes are presented. The presence of a barrier in the potential profile under the source side of the recess may affect the statistics of passage of carriers, which in turn would lead to suppressed shot noise levels. However, evidencing this noise suppression from the measurements is challenging, due to the undesired...
In this work, the presence of an anomalous increase of low-frequency noise associated with the initiation of the oscillatory regime in Gunn diodes has been studied and experimentally evidenced. When incipient instabilities begin to appear in the device, its intermittent nature drastically enhances the noise at frequencies well below that of the oscillation. For higher bias voltages, the oscillation...
In this work, the presence of anomalous low-frequency noise effects in Gunn diodes has been studied and evidenced. Near the onset of Gunn instability, there is a limited range of bias voltages for which the noise significantly increases at frequencies well below the frequency of oscillation. For higher bias voltages, the oscillation becomes purer and such low-frequency noise drastically vanishes.
Photographs acquired under low-lighting conditions require long exposure times and therefore exhibit significant blurring due to the shaking of the camera. Using shorter exposure times results in sharper images but with a very high level of noise. By taking a pair of blurred/noisy images it is possible to reconstruct a sharp image without noise. This paper is devoted to the combination of observation...
In this paper we present a new Bayesian methodology for the restoration of blurred and noisy images. Bayesian methods rely on image priors that encapsulate prior image knowledge and avoid the ill-posedness of image restoration problems. We use a spatially varying image prior utilizing a gamma-normal hyperprior distribution on the local precision parameters. This kind of hyperprior distribution, which...
A comparison of the noise behavior of Double-Gate and Standard High Electron Mobility Transistors is established by means of Monte Carlo simulations. The intrinsic noise P, R, and C parameters are only moderately improved in the DG-device, but the extrinsic minimum noise figure NFmin reveals a significantly better extrinsic noise performance, more noticeable for higher frequencies due to the better...
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