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New 3D integration technology using self-assembly and Cu nano-pillar hybrid bonding are developed to achieve high-throughput and high-precision multichip-to-wafer stacking. Many known good dies (KGDs) are simultaneously self-assembled with a high alignment accuracy making use of liquid surface tension in a face-up configuration on a carrier wafer, called SAE (Self-Assembly and Electrostatic) carrier...
We propose a novel hybrid bonding technology with a high stacking yield using ultra-high density Cu nano-pillar (CNP) for exascale 2.5D/3D integration. To solve the critical issues of current standard hybrid bonding technology, we developed scaled electrodes with slightly extruded structure and unique adhesive layer of anisotropic conductive film composed of untra-fine size, ultra-high density CNP...
Non-transfer and transfer based 3D integration technologies are developed to achieve high-throughput and high-precision multichip-to-wafer stacking. Both the stacking approaches employ KGD self-assembly technologies using liquid surface tension. In the former stacking scheme, a large number of chips having CMP-treated plasma-TEOS SiO2 on their top surface are directly self-assembled in a face-down...
Back-via three-dimensional (3D) integration using multiple thin-wafer transfer processes has been developed at GINTI, Tohoku University, where visible laser was employed for wafer debonding. The potential advantages of laser debonding are (i) the realization of ultra-thin wafer releasing with less stress as compared to the conventional thermal and chemical debonding methods, and (ii) no adhesive residues...
Induced local stress arising from local deformation of top silicon die in the vertically stacked LSI die has been investigated via x-ray photoelectron spectroscopy (XPS) and micro-Raman spectroscopy (μRS). The large positive shift in the core level Si-2s and Si-2p XP spectra for the thinned die revealed that thinned dies were under heavy stress/strain even before stacking. The core level binding energy...
We proposed a new three-dimensional (3-D) super-chip integration technology using self-assembly technique. Many chips are simultaneously aligned and bonded onto lower chips using a self-assembly technique in a super-chip integration. It was confirmed that Si chips with sizes of 1 mm square to 5 mm square were precisely assembled on Si wafers with high alignment accuracy of less than 0.5 ??m. We have...
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