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Flicker noise is studied in SiON p-MOSFETs before and after NBTI stress. Pre-stress noise magnitude and slope are correlated and used to verify N density distribution in gate dielectric. Post-stress noise magnitude and slope are used to explore distribution of trap generation during NBTI stress, and independently verified by using MFCP measurements. Consequence of N distribution (in SiON) on NBTI...
Conventional charge pumping is demonstrated on triple-gate silicon-on-insulator FinFET gated-diode structures with varying fin widths. A simple technique is proposed and verified allowing to independently estimate fin top and sidewall interface trap density. A higher interface state density on the sidewalls is observed, which is attributed to higher fin sidewall roughness. The methodology is also...
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