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In this paper, we have explored the design features of a Double-Pole Four-Throw (DP4T) RF CMOS switch with use of a novel Vertical Slit Field Effect Transistor (VSFET). This proposed switch circuit uses the double-gate which minimizes the number of transistors and increases the logic density of the transistor per unit area as compare to simple switch. These double gates are independently controlled...
In this paper, we have discussed the attenuation with ON resistance, isolation and switching speed of a Double-Pole Four-Throw (DP4T) RF CMOS switch, with properties of symmetric double-gate (DG) MOSFET to make obvious the advantages for DG circuits and reduce the number of transistors which increases the circuit density per unit area in addition to functionality as compare to simple CMOS switch....
Circuit with double gates using independently controlled gates have been proposed to reduce the number of gates and to increase the logic densities per area. This paper introduces a vertical slit FET (double gate transistor) which has been demonstrated with the help of figures with unique independent double gate properties to demonstrate the possible advantages for independent double gate circuits...
As adoption of system-level hardware design is increasing in industry and academia, accurate power estimation at this level is becoming important. In this paper, we present a system-level power estimation methodology, which is based on a high-level synthesis framework and supports sufficiently accurate power estimation of hardware designs at the system-level. For early and accurate power estimation,...
Dynamic power management (DPM) refers to the problem of judicious application of various low-power techniques based on runtime conditions in an embedded system to minimize the total energy consumption. To be effective, often such decisions take into account the operating conditions and the system-level design goals. DPM has been a subject of intense research in the past decade driven by the need for...
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