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Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control and SiO2 tunnel layers. It was obtained that a properly located layer of Si or Ge nanocrystals can improve both the charging and retention behaviour of the MNOS structures simultaneously. Memory window width of about 6.6 V and retention time of 41 years...
InGaAsSb layers were grown on GaSb substrates by liquid phase epitaxy. The variation of the bandgap with composition was determined and a new value for the bandgap bowing parameter is proposed. Mechanisms of the current conduction process in Au/InGaAsSb Schottky barrier structures were determined as well as the value of the Schottky barrier heights.
In the present work nanowires are investigated, which were prepared with the help of encapsulated metal induced growth method on GaAs and InP substrate. As our former investigations show, we can receive nanowires with substrate-like composition in the case of InP. In the case of GaAs substrate the situation is entirely different, while the growth technology in both cases was the same. The difference...
Au contacts have been prepared to In0.12Ga0.88As0.11Sb0.89/GaSb:Te and to GaSb:Ge/GaSb: Te epitaxial structures. For the In0.12Ga0.88As0.11Sb0.89/GaSb:Te structure Au yielded relatively good Schottky contact, but the current-voltage characteristics exhibited two regions at low temperatures due to two competing parallel pathes with different apparent barrier heights, ideality factors, and series resistances...
Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control layer and SiO2 or Si3N4 tunnel layers. It was obtained that a properly located layer of Si nanocrystals improves the charging behaviour of the MNOS structures. Memory window width of about 6.6 V and retention time of 41 years has been achieved for charging...
In the present activity the properties of the Si/SiGe MODFET structure with a Si electronic transport channel in SiGe layer are studied. Larger attention is given to the interfaces of a channel and their influence on the electrical characteristics of a structure. Is shown, that in actual structures the kinetics of molecules disintegration not only determine a structure profile near interfaces, but...
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