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Film bulk acoustic resonator (FBAR) was fabricated using AlN(0002) film. We achieved the high oriented AlN(0002) film through the metal-organic chemical vapor deposition (MOCVD) method on Ru/Ta bottom electrode. But thermal stress of AlN film was a problem in the high temperature MOCVD process over 1000degC. To reduce the thermal stress of AlN film, the low temperature AlN film growth was needed....
We have successfully fabricated 5 GHz band FBAR using aluminium nitride (AlN) film by metal organic chemical vapor deposition (MOCVD) method on SiO2/Si substrate. However, large spurious existed between resonant frequency and antiresonant frequency on admittance characteristics of prototype FBAR. We analyzed spurious vibration mechanism using three-dimensional (3-D) simulation. Spurious vibration...
Film bulk acoustic resonator (FBAR) using AlN film was fabricated. Metal-organic chemical vapor deposition (MOCVD) was used to obtain high oriented AlN (0002) film. The unloaded Q factor (Qscrr) of fabricated FBAR was improved by reduction of Mo electrode resistance and optimization of cavity etching process. Since Mo nitridation degraded Mo resistance, reaction time between Mo and NH3 became shorter...
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