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In this work we examine the effect of nitrogen incorporation on the defect generation behavior in HfSiON gate dielectric layers. We show that nitrogen effectively passivates pre-existing defects in the HfSiO, but the effect is quickly reversed during stress leading to high levels of SILC and NBTI.
In this paper we review some recent results on reliability of MuGFET nanodevices with different gate stacks, including polycrystalline-Si/SiON as well as deposited metal gate/high-k stacks. In the first part we show how we can get information on the interface quality of the sidewall and top interface of the devices, by using an adapted charge pumping technique on gated diode structures. Then we compare...
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