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The transverse Seebeck effect in tilted metal-semiconductor multilayer structures has been exploited for electric power generation. In tilted Pb–Bi2Te3 multilayer samples, coefficients of performance for transverse thermoelectric power generation have been determined, in dependence of temperature difference between hot and cold sample surfaces. The results can be described well by modeling calculations...
Multilayer structures A–B–A⋅⋅⋅ consisting of alternating layers of a metal A and a semiconductor B can show large anisotropy in their transport properties. In tilted multilayer structures, where layer planes and sample surface include a nonzero tilt angle, nonvanishing off-diagonal elements in the sample’s transport tensors lead to transverse Seebeck and Peltier effects. Achievable temperature differences...
We report on the observation of the circular (radiation helicity dependent) and linear photogalvanic effects in MOSFETs with n-type inversion channels fabricated on vicinal silicon surfaces. The photocurrents are excited in unbiased transistors across the source and drain contacts by terahertz radiation at normal incident. We developed the miscroscopic theory of the circular photogalvanic effect demonstrating...
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