Search results for: B. Gelloz

Items from 1 to 18 out of 18 results

article

Growth of silver nanoparticles stimulate spectroscopic properties of Er3+ doped phosphate glasses: Heat treatment effect

I. Soltani, S. Hraiech, K. Horchani-Naifer, H. Elhouichet, more

Journal of Alloys and Compounds > 2016 > 686 > C > 556-563

The melt quenching technique was used to prepare Er³⁺ ion doped phosphate glasses containing silver nanoparticles (Ag NPs). The amorphous nature of the glass is confirmed by X-ray diffraction patterns. Homogeneous distribution of spherical Ag NPs was shown from the transmission electron microscopy (TEM). The EDX analysis shows the presence of Ag element. The DSC measurements indicate a relatively...

chapter

Nanocrystalline Si EL Devices

B. Gelloz, N. Koshida

Nanostructure Science and Technology > Device Applications of Silicon Nanocrystals and Nanostructures > 25-70

This review presents the recent developments in electroluminescence (EL) from nanocrystalline silicon systems. These systems include nanoporous silicon, Si-rich silicon oxides and nitrides, superlattices, and other low-dimensional silicon structures. In many of them, EL originates from recombination of excitons in silicon nanocrystals. Systems where nanocrystalline silicon is a key element but is...

article

Optical and spectroscopic properties of Eu-doped tellurite glasses and glass ceramics

W. Stambouli, H. Elhouichet, B. Gelloz, M. Férid

Journal of Luminescence > 2013 > 138 > Complete > 201-208

Tellurite glasses doped with trivalent europium were prepared by the conventional melt quenching technique, in the chemical composition of (85−x) TeO ₂ +5La ₂ O ₃ +10TiO ₂ +xEu ₂ O ₃ by varying the concentration of the rare-earth ion in the order 0.5, 1 and 1.5mol%. Using Judd–Ofelt analysis, we calculated intensity parameters (Ω ₂ and Ω ...

article

Energy transfer induced Eu3+ photoluminescence enhancement in tellurite glass

W. Stambouli, H. Elhouichet, B. Gelloz, M. Férid, more

Journal of Luminescence > 2012 > 132 > 1 > 205-209

In this work, structural, thermal and optical properties of Eu ³⁺ doped TeO ₂ –La ₂ O ₃ –TiO ₂ glass were investigated. The differential scanning calorimetry (DSC) measurements reveal an important stability factor ΔT=143.52K, which indicates the good thermal and mechanical stabilities of tellurite glass. From the absorption spectrum, the optical band gap was...

article

Multiple energy transfer in porous silicon/Rh6G/RhB nanocomposite evidenced by photoluminescence and its polarization memory

A. Chouket, H. Elhouichet, H. Koyama, B. Gelloz, more

Thin Solid Films > 2010 > 518 > 6 Supplement 1 > S212-S216

Porous silicon (PSi)-laser dye composites were obtained by simply immersing PSi in ethanolic solutions of rhodamine 6G (Rh6G), rhodamine B (RhB), and RhB:Rh6G mixture. Partially oxidized PSi was also used as a host matrix. Fourier transform infrared spectroscopy suggests that the dye molecules fully penetrate into the porous matrix. Efficient photoluminescence (PL) was observed in all nanocomposites...

article

Effect of high-pressure water-vapor annealing on energy transfer in dye-impregnated porous silicon

A. Chouket, B. Gelloz, H. Koyama, H. Elhouichet, more

Journal of Luminescence > 2009 > 129 > 11 > 1332-1335

We have studied the effect of high-pressure water-vapor annealing (HWA) on the excitation energy transfer from Si nanocrystals to dye molecules in porous Si layers. Efficient photoluminescence, originating from both RhB molecules and Si nanocrystals, was observed. The behavior of the polarization memory of the photoluminescence showed the presence of energy transfer from the surface-passivated Si...

chapter

Influence of a metallic particle at a metal/insulator/gas triple junction in air and SF6

L. Caliap, O. Lesaint, A. Denat, N. Bonifaci, more

2009 IEEE Conference on Electrical Insulation and Dielectric Phenomena > 364 - 367

2009 IEEE Annual Conference on Electrical Insulation and Dielectric Phenomena (CEIDP 2009)

In gas insulated switchgears (GIS), high voltage electrodes are supported by solid insulators. A "triple junction" (TJ) exists at the interface between metal, insulating solid, and gas. This area constitutes a preferential zone were partial discharges (PDs) can appear. A further degradation of insulation performance can occur if solid particles accumulate at that place. This paper presents...

chapter

Illumination effects on the characteristics of nanocrystalline silicon ballistic emitter as an active electrode in solutions

T. Ohta, S. Ogawa, B. Gelloz, N. Koshida

2009 22nd International Vacuum Nanoelectronics Conference > 85 - 86

2009 22nd International Vacuum Nanoelectronics Conference (IVNC2009)

As reported previously, the nanocrystalline silicon (nc-Si) ballistic electron emitter shows some specific features: emission of high energy electrons with several eV in average, surface emission, small angle dispersion, operation in various medium, including vacuum, atmospheric-pressure gases, and solutions. When the emitter is driven in aqueous solutions without using any counter electrode, hydrogen...

chapter

Development of efficient broadband digital acoustic device based on nanocrystalline silicon ultrasound emitter

N. Koshida, A. Asami, B. Gelloz

2008 IEEE International Electron Devices Meeting > 1 - 4

IEDM 2008. IEEE International Electron Devices Meeting

There is an extremely high contrast in the thermal properties between single-crystalline silicon and quantum-sized nanocrystalline silicon. As previously reported, it makes possible to generate acoustic wave only by thermal transfer without any mechanical surface vibration systems. To make the best use of its characteristics, a digital drive scheme is introduced into a two-dimensionally arrayed device...

article

Polarization memory of blue and red luminescence from nanocrystalline porous silicon treated by high-pressure water vapor annealing

B. Gelloz, H. Koyama, N. Koshida

Thin Solid Films > 2008 > 517 > 1 > 376-379

The polarization memory (PM) effect in the blue and red photoluminescence (PL) of p-type porous Si (PS) treated by high-pressure water vapor annealing (HWA) has been investigated. HWA induces a significant blue PL emission at about 450 nm, together with a drastic enhancement of the red PL intensity. The polarization memory of the red emission band is anisotropic and is in agreement with emission from...

chapter

Optoelectronic effect of high-pressure water vapor annealing for nanocrystalline silicon films prepared by ion implantation

B. Gelloz, A. Takeuchi, N. Koshida

2008 5th IEEE International Conference on Group IV Photonics > 317 - 319

2008 5th IEEE International Conference on Group IV Photonics (GFP)

Nanocrystalline Si quantum dots were introduced in SiO₂ and Si₃N₄ layers by ion implantation followed by annealing. Their optoelectronic characteristics were much improved by a significant reduction of defects as in the case of nanocrystalline materials prepared by wet processing.

article

Partial discharges at a triple junction metal/solid insulator/gas and simulation of inception voltage

C. Tran Duy, N. Bonifaci, A. Denat, O. Lesaint, more

Journal of Electrostatics > 2008 > 66 > 5-6 > 319-327

In gas-insulated systems, the presence of solid insulators used to hold conductors at high voltage induces the presence of triple interfaces where the metal, solid insulator and gas are in contact. These regions, usually named “triple junction”, constitute weak points for the insulation, mainly due to the mismatch between permittivities of solid and gas, which induces an enhancement of the electric...

chapter

Characteristics of nanosilicon ballistic cold cathode in liquids as an active electrode

T. Ohta, B. Gelloz, N. Koshida

2007 IEEE 20th International Vacuum Nanoelectronics Conference > 74 - 75

20th International Vacuum Nanoelectronics Conference

This paper reports a concept of the ballistic emitter operation for its possible use in liquids. The nc-Si cold cathodes were fabricated on n-type Si wafers or polycrystalline Si films. It is concluded that the ballistic emitter provides useful means not only for hydrogen generation, but also for control of pH values, redox potentials, and electrochemical activity of solutions including biological...

chapter

Light-emissive nonvolatile memory based on nanocrystalline porous Si

B. Gelloz, Y. Yoshida, N. Koshida

2007 4th IEEE International Conference on Group IV Photonics > 1 - 3

2007 4th IEEE International Conference on Group IV Photonics

The characteristics of light-emissive nonvolatile memory based on nanocrystalline Si are dramatically improved by complete surface passivation with high-quality tunnel oxides. Electrically or optically stored information can be read out as either electrical or optical signal.

article

Highly enhanced photoluminescence of as-anodized and electrochemically oxidized nanocrystalline p-type porous silicon treated by high-pressure water vapor annealing

B. Gelloz, N. Koshida

Thin Solid Films > 2006 > 508 > 1-2 > 406-409

The effects of a treatment based on high-pressure water vapor annealing (HWA) on nanocrystalline porous silicon (PS) and electrochemically oxidized PS have been investigated in terms of the photoluminescence (PL) efficiency and stability, electron-spin-resonance and infrared spectroscopy. The treatment produces highly efficient and stable luminescent nanocrystalline Si layers emitting red-orange light...

article

Conduction and Luminescent Properties of Wet Porous Silicon

B. Gelloz, A. Bsiesy, N. Koshida

Journal of Porous Materials > 2000 > 7 > 1-3 > 103-106

Carrier transport and photoluminescence-quenching mechanisms in reverse-biased p-type porous silicon in contact with an aqueous electrolyte are investigated. Concerning transport mechanisms investigation, experiments are based on the study of the photo-induced current as a function of the porous layer thickness. The liquid-impregnated porous silicon skeleton is found under equipotential conditions...

article

Possible explanation of the contradictory results on the porous silicon photoluminescence evolution after low temperature treatments

B. Gelloz

Applied Surface Science > 1997 > 108 > 4 > 449-454

The modification of the porous silicon photoluminescence (PL) after a low level thermal oxidation at 300°C is studied by analyzing the surface chemical composition using infra-red spectroscopy. The amount of oxide is determined quantitatively. Two different porosities of porous silicon are studied: 70% and 80%. in the case of the 70% porosity porous layer, this thermal process leads to an important...

article

Conduction in porous silicon contacted by a liquid phase

B. Gelloz, A. Bsiesy, F. Gaspard, F. Muller

Thin Solid Films > 1996 > 276 > 1-2 > 175-178

The origin of the electronic free charge carrier accumulation/depletion in the porous silicon skeleton contacted with an electrolyte is determined by investigating the limiting step in the conduction process. Experimental evidence, supported by quantitative considerations, show that the porous silicon can be conductive if the free charge carrier flux supplied by the substrate is not the rate-determining...

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