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An overview is given of the hybrid AlGaInAs-silicon platform where InP active and silicon passive components are integrated using wafer bonding. Hybrid optical amplifiers and lasers demonstrate the functionality this platform bring silicon photonics.
Optical amplifiers are important elements of photonic integrated circuits. We present a hybrid silicon evanescent amplifier utilizing a wafer bonded structure of silicon waveguide and AlGaInAs quantum wells. A chip gain of 13 dB with a power penalty of 0.5 dB at 40 Gb/s data amplification is demonstrated.
The structure and design of a hybrid silicon evanescent amplifier, incorporating III-V offset quantum wells bonded on a silicon waveguide, is proposed and discussed.
We report a novel laser architecture, the hybrid silicon evanescent laser (SEL), that utilizes offset AlGaInAs quantum wells (QWs) bonded to a silicon waveguide. The silicon waveguide is fabricated on a silicon-on-insulator wafer using a complimentary metal-oxide-semiconductor-compatible process, and is subsequently bonded with the AlGaInAs QW structure using low temperature O2 plasma-assisted wafer...
We demonstrate a silicon evanescent laser operating CW up to 60degC. The laser operates at 1568 nm with a maximum fiber-coupled output power of 4.5 mW. Devices are fabricated with silicon waveguides bonded to AlGaInAs quantum wells
We present an integration technology for building active photonic devices on a silicon-on-insulator (SOI) based platform by using plasma assisted wafer bonding of III-V quantum wells to passive devices fabricated on SOI. Using this technique we have demonstrated an optically pumped silicon evanescent laser operating continuous wave (CW) up to 60degC. The lasers emit at 1.5 mum with a minimum threshold...
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