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We experimentally demonstrated that helium-ion-implantation can reduce the optical loss due to free carriers produced by two photon absorption and enhance self-phase-modulation in silicon waveguide.
We propose and demonstrate an in-line channel power monitor (ICPM) based on helium ion implanted silicon waveguides. The implanted waveguide can detect light at below-bandgap wavelengths (1440-1590 nm) which are normally not detectable by silicon. We study the enhanced photoresponse of helium ion implanted samples which were annealed at 200 degC, 300 degC, or 350 degC for different durations. Optical...
We study the infrared photoresponse of silicon waveguides which were implanted with helium ions. The observed enhancement in responsivity at 1.55 mum wavelength was sufficient for use in in-line channel power monitoring applications
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