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High-voltage blocking (2.7-kV) implantation-free SiC bipolar junction transistors with low ON-state resistance (12 mOmegaldrcm2) and high common-emitter current gain of 50 have been fabricated. A graded-base doping was implemented to provide a low-resistive ohmic contact to the epitaxial base. This design features a fully depleted base layer close to the breakdown voltage providing an efficient epitaxial...
In this work, a 100 nm Ni layer was deposited on both Si-face and C-face of n-type doped low resistive (<30 mOmega-cm) 4H-SiC wafers by means of E-beam evaporation in a vacuum of the order of 10-7 Pa. These layer were patterned to form circular contacts and were cut in pieces to perform RTP annealing at different temperatures (800-1000 degC) in Ar ambient followed by I-V measurements to compare...
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