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We have investigated Al2O3, Dy2O3, and La2O3 as dielectric cap layers for use in low Vt CMOS integration schemes. The cap layers are found to reduce the Vt by 0.2 V for pFET, and with 0.2 V and 0.5 V for nFET, respectively. Subsequently, we report on the benefits of performing the nitridation (by means of DPN) after cap deposition, instead of before. This allows better control of the nitrogen profile...
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