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The performance of IGBT (Insulated Gate Bipolar Transistor) power module under power cycling test is investigated based on a FEA (Finite Element Analysis) method. Critical point of solder fatigue has been discovered through analysis. Thermal cycling test has also been simulated as a comparison. The impact of power module parameters, such as power dissipation of chip, cycle period, solder layer thickness...
In this paper, a CMOS compatible silicon nanowire (Si NW) fabrication method on bulk silicon substrate is carried out using the self-limiting oxidation (SLO) to accurately control its size and cross-sectional shape. A predictive model for the 2-D SLO of Si NWs is presented. In this model, both the reduced reaction rate and diffusivity result in the oxidation rate degradation. The orientation dependence...
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