The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Thermal stability of strained SOI fabricated by Smart Cut technique was found to be high enough for the current Si process, particularly with SiO 2 protection films. The strain states, in-plane and out-of-plane lattice constants, were found not to change after annealing up to 1150 °C with SiO 2 films though those of thinner sSOI without the protection film gradually changed due to...
SiGe-free strained-Si-on-insulator (sSOI) is a promising structure for near-future CMOS circuits because it has benefits of both strained Si and SOI and it is free from problems relating to SiGe buffer layers. In this study, the strain state and thermal stability of sSOI substrates fabricated by the wafer bonding technique was investigated in detail by Raman spectroscopy and X-ray diffraction (XRD)...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.