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This study reports on a reliability investigation of AlGaN/GaN HEMTs submitted to life tests in High Temperature Operating (HTO) conditions at 150°C, 175°C, 275°C and 320°C. These life tests showed two different degradation steps of the drain current. One is occurring in the first tens of hour of the life test and characterized by a decrease of the drain current. The evolution of the electrical characteristics...
This work is a study of the degradation of AlGaN/GaN HEMTs generated by different ageing tests. The methodology is based on cross-characterisation analyses. The life tests (HTO 175°C, HTO 250°C, HTO 275°C and HTO 320°C) have mainly caused a strong decrease of the drain current at the very beginning of the test, then its partial recovery and finally its collapse. No evident degradation of the Schottky...
A long-term 3000-hour test under on-state conditions (VDS =25V, 6W/mm constant dissipated power) and off-state conditions (V DS=46V, VGS=-6V) on GaN/AlGaN/GaN HEMTs is presented. Trapping presence and hot-electrons effect are characterized by means of low-frequency techniques (low-frequency noise measurements, transconductance frequency dispersion, gate-lag). The on-state stress shows the most important...
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