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On the basis of papers published on the fundamental and excess LF noise sources in compound semiconductor transistors, two main issues are addressed in this paper: i) the characterization of LF noise sources linked to parasitic effects induced by innovative component architecture in emerging technologies such as GaN-based HEMTs and GaAsSb HBTs. ii) the identification of LF noise sources linked to...
This work is a study of the degradation of AlGaN/GaN HEMTs generated by different ageing tests. The methodology is based on cross-characterisation analyses. The life tests (HTO 175°C, HTO 250°C, HTO 275°C and HTO 320°C) have mainly caused a strong decrease of the drain current at the very beginning of the test, then its partial recovery and finally its collapse. No evident degradation of the Schottky...
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