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A vibration sensor with floating gate based on standard CMOS and post-CMOS processes is presented. The vibrating membrane is released with one simple metal sacrificial layer removal step, which is very cost-efficient and fully CMOS compatible, enabling monolithic integration of circuitry. Test results show that the proposed sensor can work properly, and have good frequency linearity with the test...
In this paper, a novel compact structure design for minimizing the chip area cost is proposed. The improvement in sensitivity and temperature drift for silicon piezoresistive force sensor is evaluated. The sensitivity improvement can be obtained by adding a long flexible cantilever, and locating stress-sensitive element at a high stressed area close to the bottom surface of the lower cantilever. An...
A novel SON (silicon-on-nothing)-LDMOS (laterally diffused MOS) with heavily doped buried layer (HDBL) beneath air layer is proposed for RF base-station power amplifier application. The characteristics of the proposed device are analyzed in terms of breakdown voltage, kink effect, and high frequency performance. With the device and circuit simulator Atlas, two-dimensional simulations are presented...
A novel design for the temperature control of a micro-hotplate gas sensor is presented. Finite difference algorithm is developed to solve the sensor temperature stability problem under ambient air interference. A simple circuit is proposed to accurately adjust the micro-hotplate temperature with a resolution of 0.04degC. The proposed sensor has ultra low power consumption (about 13.9 muW) and is a...
A novel micro-vibration sensor with MOS structure is proposed and two solutions to reduce high threshold voltage are developed. The proposed sensor exhibits prefect linearity up to 99.98% and high resolution of 0.19 muA/g. The vibration sensor can provide various potential applications, such as civil structural health monitoring, biomedical applications, low power consumption wireless sensor networks...
Silicon-on-Nothing (SON) device is expected to be obtained by double He+ implantation. The leakage currents of the SON MOSFET using twice energy implants are lower for 1~2 order of magnitude than that of using single energy implant simulated by ATLAS Simulator on electrical characteristic of SON MOSFETs. The self-heating effect in SON device can be suppressed by etch-back sidewall of shallow trench...
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