The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
PBTI degradation for HfO2 and HfSiON NMOSFETs has been demonstrated. The generated oxide trap dominated the PBTI characteristics for Hf-based gate dielectrics. In addition, the reduction of DeltaVTH and oxide trap generation under PBTI indicates that the HfSiON is better than HfO2. On the other hand, the electron trapping/de-trapping effect has been investigated. As compared to HfO2 dielectrics, the...
This paper reports the BTI reliability of dual metal gate CMOSFETs with Hf-based dielectrics including HfO2 and HfSiON. Severer PBTI degradation was observed on HfO2 NMOSFETs and two NBTI degradation behaviors were observed on HfO2 pMOSFET. The strain effect and channel length dependence on BTI were also investigated. Mechanical strain degrades NBTI but has no effect on PBTI. As channel length scaling...
This letter reports the engineering of effective work function (EWF) for tantalum carbide (TaC) metal gate on high-k gate dielectrics. The dependence of EWF on Si concentration in HfSiO as well as nitridation techniques is revealed. The EWF was extracted by both terraced oxide and terraced high-k techniques with the bulk and interface charges taken into account. The incorporation of Si in Hf-based...
A systematic study is performed on tantalum carbide (TaC) metal electrode on HfO2 and HfSiON dielectrics using conventional CMOS process. TaC's effective work function (EWF) is estimated to be 4.28 eV on HfO2 using Vfb~EOT methodology, where both interfacial oxide and high-K film thickness are varied and thus charge effect is corrected successfully. Investigation of the EWF dependence on underlying...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.