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Atomic layer deposition (ALD) is supplied to grow ZrO2 high-k gate dielectrics and fabricate InAlN/GaN metal oxide semiconductor (MOS) high electron mobility transistors (HEMTs). Ex situ chemical surface cleaning and optimised in situ InAlN surface pre-treatment by ALD lead to a substantial suppression of drain-source current collapse owing to a high-quality InAlN/oxide interface. In addition, the...
In this article, we investigate the effect of a rapid thermal annealing (RTA) on electrical properties InAIN/GaN MOSHEMT with Al2O3 insulating film. On samples, we measured input, output and pulse characteristics. Consequently, a threshold voltage and an extrinsic transconductance was determined. A more dramatic influence of RTA was observed after annealing at 700degC. In this case, a reduction of...
In this paper we investigate growth of Al2O3 and performance of Al2O3/GaN MOS structures using O2, Ar and NH3 pre-treatment of GaN surface. Rapid thermal annealing (RTA) after the growth is also tested. Current-voltage (I-V) and thermal activation energy measurements were used for characterization of MOS and reference Ni/GaN Schottky contact structures. From the I-V characteristics, reduction of the...
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