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We report here the successful fabrication of large-area size-and site-controlled periodic arrays of Si nanowires by employing the colloidal nanosphere lithography technique and Au-assisted selective chemical etching process. The vertically-aligned Si nanowires with diameters down to 190 nm and 90 nm were selectively formed at particular positions on the pre-patterned (001)Si substrates. All the Si...
Large-area, vertically aligned silicon nanowire arrays have been successfully fabricated on (001)Si substrates via the redox reactions between silicon and silver ions in the aqueous solution of AgNO3/HF. From SEM and TEM observations, the typical widths of the synthesized SiNWs are in the range of 30-200 nm. The lengths of SiNWs could be tuned from several to tens of micrometers by adjusting the reaction...
The interfacial reactions of the 2D-ordered nickel metal nanodots that were prepared by polystyrene nanosphere lithography (NSL) on Si substrates after different heat treatments have been investigated. Epitaxial NiSi 2 nanodot arrays were found to form at a temperature as low as 350 °C. The results indicated that the growth of epitaxial NiSi 2 is more favorable for the Ni metal dot...
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