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The double patterning (DP) process is mainly for the resolution enhancement beyond limited lithography system not only high numerical aperture (NA) system but small one also. In this paper, we developed several duty patterns using DP technology under ArF, 0.75 NA systems to meet the 65 nm half-pitch patterns. For the line DP process, it is clear that the limited resolution is 65 nm half pitch pattern...
The characteristics and performance of SPM and XPA were investigated for the sub-110 nm and below memory lithography. Various alignment strategies using SPM and XPA were compared on the production wafer for improved overlay performance. It is evident that SPM out-performs XPA for most of layers as CMP can easily over polish XPA due to the low pattern density. Based on these results, it is believed...
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