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This paper presents a fully integrated V-band two stage power amplifier with cascode topology. The PA is designed on 0.25 ??m SiGe:C BiCMOS technology. The technology provides ft and fmax ?? 200 GHz. The two stage PA provides a gain of 17 dB at 64 GHz. The PA has been optimized for biasing circuit, PA Core and the matching networks. This has resulted in high power and high linearity from 58 GHz to...
This paper presents a fully integrated 60 GHz single stage power amplifier with cascode topology. The PA is designed on 0.25 mum SiGe:C BiCMOS technology. The technology provides ft and fmax ap 200 GHz. The PA has achieved the 1 dB gain bandwidth of more than 9 GHz from 57 GHz to 66 GHz and 3 dB gain bandwidth of more than 18 GHz (30 %) from 51 GHz to 69 GHz. The PA has been designed to have the wideband...
A 60 GHz SiGe HBT chipset for high speed wireless communication systems has been developed. The functionalities of LNA, up-converter, down-converter and PA have been realized with good performance. Design strategy, achieved results and comparison with state-of-the-art work will be presented. The work proves that single chip integration of the whole 60 GHz RF-frond-end will be possible using silicon...
A two stage bipolar low noise amplifier based on common-emitter configuration is presented in this work. From transistor size scaling to complete two stage integration, various design aspects and issues will be investigated. It will be shown that by following the proposed design methodology, the input as well as the interstage matching of the low noise amplifier (LNA) can be highly simplified without...
A monolithic low-noise-amplifier operating in the 60 GHz band is presented. The circuit has been designed utilizing an advanced 0.25 mum SiGe BiCMOS technology, featuring npn transistors with fT and fmax ap 200 GHz. A two stage cascode architecture has been chosen for the implementation. Design techniques and optimization procedure are explained in detail. Measurements show a gain of 18 dB at 61 GHz,...
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