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In this paper the design and measurement of a four stage broadband differential power amplifier intended for W-band using 40 nm bulk CMOS is presented. In order to achieve broadband performance a complex output matching network consisting of transmission line elements and transformers is employed. Furthermore capacitive cross-coupling neutralization is introduced to enhance the stability and the small-signal...
The emergence of digital mobile broadband communication systems for voice, data, multimedia and positioning is coupled to the continuous progress of silicon CMOS-technology. Single chip integration with digital part while maintaining excellent RF performance, high integration density, low power consumption and low cost under mass production aspects are the current system design challenges. This paper...
The emergence of digital mobile broadband communication systems for voice, data, multimedia and positioning is coupled to the continuous progress of silicon CMOS-technology. Single chip integration with digital part, high integration density, low power consumption, low cost under mass production aspects and excellent RF performance are the current system design challenges. This paper focuses on design...
The emergence of digital mobile broadband communication systems for voice, data, multimedia and positioning is coupled to the continuous progress of silicon CMOS-technology. Single chip integration with digital part, high integration density, low power consumption, low cost under mass production aspects and excellent RF performance are the current system design challenges. This paper focuses on design...
The emergence of digital mobile broadband communication systems for voice, data, multimedia and positioning is coupled to the continuous progress of silicon CMOS-technology. Single chip integration with digital part, high integration density, low power consumption, low cost under mass production aspects and excellent RF performance are the current system design challenges. This paper focuses on design...
This work describes a lumped element based MIM capacitor model for the frequency range up to 110 GHz. Several MIM capacitors with different areas have been fabricated in a five metal layer 0.25 m SiGe HBT technology. All structures have been analyzed in a 2.5 D EM simulation environment and the simulated results are compared to measurements. A lumped element model valid up to 110 GHz has been developed...
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