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This paper presents a fully integrated V-band two stage power amplifier with cascode topology. The PA is designed on 0.25 ??m SiGe:C BiCMOS technology. The technology provides ft and fmax ?? 200 GHz. The two stage PA provides a gain of 17 dB at 64 GHz. The PA has been optimized for biasing circuit, PA Core and the matching networks. This has resulted in high power and high linearity from 58 GHz to...
This paper presents a fully integrated 60 GHz single stage power amplifier with cascode topology. The PA is designed on 0.25 mum SiGe:C BiCMOS technology. The technology provides ft and fmax ap 200 GHz. The PA has achieved the 1 dB gain bandwidth of more than 9 GHz from 57 GHz to 66 GHz and 3 dB gain bandwidth of more than 18 GHz (30 %) from 51 GHz to 69 GHz. The PA has been designed to have the wideband...
A wideband amplifier up to 50 GHz has been implemented in a 0.25 mum, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7 times 0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise Figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author's best knowledge this is the...
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