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The interfacial layer (IL) control is a key to achieving deep sub-nm EOT gate stacks with maintaining superior interface properties. We propose the thermodynamically robust IL engineering on Ge (Y2O3-doped GeO2 IL). Based on the understanding of Y2O3-doped GeO2 IL, we have demonstrated 0.47-nm-thick EOT on Ge, and the highest electron mobility at high-Ns in Ge n-MOSFETs with sub-nm-thick EOT.
The objective of this paper is to clarify the primary roles of high-k layer and of interfacial layer on the TDDB lifetime in order to provide a guideline for realizing adequate TDDB reliability and also for the further high-k material selection. HfAlO(N)/SiO(N) and HfON/SiON stacked gate dielectrics has been fabricated with various deposition conditions and thicknesses. Electrical characteristics...
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