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We have successfully fabricated a 0.5 nm FUSI-NiSi/ HfO2 HfSiOx/ Si gate stack structure with the gate-first process. The HfSiOx interfacial layer was formed by the cycle-by-cycle deposition and annealing process, followed by the in-situ layer-by-layer deposition and annealing for HfO2 growth. The gate leakage current of ~ 10 A/cm at Vfb - 1.0 V and the effective electron mobilityof 120 cm2/Vs at...
In this paper, the authors propose novel thin-body SOI FETs with NiSi-cladding. NiSi-cladding is fabricated after the formation of the sacrificing Si layer, and hence the Si consumption in SOI layer is minimized. It is found that NiSi cladding provides compressive strain in pFETs, which causes one order of magnitude decrease in pFET's off-current. In addition to the effect of NiSi-cladding, the influence...
Self-organized (111) faceted NiSi2 source and drain structure with segregated dopants in the NiSi2/Si interfaces has been proposed for aggressively scaled SOI MOSFETs. The advantages of this source and drain structure are a superior short-channel effect (SCE) immunity and a very small parasitic resistance. The SCE is suppressed by a trapezoidal shape of the channel and by a small variation in the...
The impact of epitaxial NiSi2 S/D on MOSFET performance has been investigated. Atomically flat NiSi2/Si (111)-facet interface and straight S/D edges irrespective of the gate edge roughness contribute to suppressing SCE
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