The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Field effect mobility of the graphene transferred on the SiO2/Si substrate scatters in various reports and is limited to a typical value of ~10,000 cm2/Vs. Without understanding the interaction between graphene and SiO2, it is difficult to improve transport properties. This paper discusses effects of various plasma treatments and reoxidization of the SiO2 surface on graphene characteristics.
Based on the understanding of kinetic views of GeO desorption from GeO2/Ge stacks, thermodynamic control of the qualities of both GeO2 films and GeO2/Ge interfaces was demonstrated. It was proposed to characterize the effects of GeO desorption on GeO2 by the optical absorption. In addition, MIS band alignment was also discussed from the viewpoint of the effects of metal-GeO2 interaction at the top...
Graphene with a high carrier mobility of more than 10,000 cm2/Vs on SiO2 has attracted much attention as a promising candidate of future high-speed transistor materials. The contact resistance (RC) between graphene and metal electrodes is crucially important for achieving potentially high performance of graphene from both physics and practical viewpoints. This paper discusses metal/graphene contact...
This paper discusses a possible way to achieve better FET performances for both channels as well as a determination mechanism of the channel type. We investigated perfluoropentace (C22F14) (PF-pentacene) for n-channel and pentacene (C22F14) for p-channel FETs. On the basis of the energy level consideration for both channel material and S/D metals, we show a systematic guideline for achieving a better...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.