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Experimental investigation of neutron induced single event failures and the associated device cross sections as well as low altitude failure-in-time (FIT) curves in silicon (Si) and silicon carbide (SiC) power MOSFETs at room temperature are reported along with possible explanation of failure mechanisms in SiC devices. Neutrons are found to give rise to significantly fewer failures in SiC power MOSFETs...
Experimental investigation of neutron induced single event failures in silicon carbide (SiC) power MOSFETs at room temperature and 150C is presented. The cross sections for failures at high temperature are presented for the first time. 1200V 36A Cree C2M0080120D SiC power MOSFETs are used for investigating neutron induced failures in silicon carbide devices, related neutron failure cross sections,...
Interface traps play a crucial role in determining total mobile charge available for conduction and also in determining low field mobility in 4H-SiC MOSFETs. They are important in determining current and transconductance in these devices. Accurate calculation of the interface trap density is essential for characterization of transport in 4H-SiC MOS devices. Typical conduction band edge density of...
SiC MOSFETs suffer from an excessively high density of interface traps. Here, we present physical models to quantify the effect of quantum confinement in the channel of 4H-SiC MOSFETs on the occupation of interface traps. Quantum confinement in the MOSFET channel is solved for using the density gradient approach. Models for estimating the Fermi level at the interface, and thereby evaluating the occupation...
We develop numerical modeling techniques to investigate the electrical performance of a deoxyribonucleic acid (DNA) microsensor that uses a carbon nanotube thin film transistor (CN-TFT), and obtain agreement with experiment. This DNA microassay is developed to electrically sense low concentrations (pico to nano Molars) of specific DNA strands without requiring the use of labels such as fluorescent...
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