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SiC MOSFETs suffer from an excessively high density of interface traps. Here, we present physical models to quantify the effect of quantum confinement in the channel of 4H-SiC MOSFETs on the occupation of interface traps. Quantum confinement in the MOSFET channel is solved for using the density gradient approach. Models for estimating the Fermi level at the interface, and thereby evaluating the occupation...
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