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The subband current is evaluated by solving the non-equilibrium Green's function (NEGF) self-consistently with Poisson's equation for the double-gate MOSFETs with different channel lengths and thicknesses. The characteristics of subband current ratio and the details of subband number M are simulated, and the results show that the characteristics of current are determined by the first subband when...
Terahertz (THZ) detection by field effect transistors (FETs) has been paid great attention in recent years. This paper outlined the numerical study of terahertz radiation detection by FETs in our group, including the fundamental THz detection model, detection model with two sources, heterodyne detection model and optical beating model. These study results demonstrated the potential application of...
As technology scales, the aging effect caused by Negative Bias Temperature Instability (NBTI) has become a major reliability concern for circuit designers. On the other hand, reducing leakage power remains to be one of the design goals. Because both NBTI-induced circuit degradation and standby leakage power have a strong dependency on the input vectors, Input Vector Control (IVC) technique may be...
Negative bias temperature instability (NBTI) has become the dominant reliability concern for nanoscale PMOS transistors. In this paper, a predictive model is developed for the degradation of NBTI in both static and dynamic operations. Model scalability and generality are comprehensively verified with experimental data over a wide range of process and bias conditions. By implementing the new model...
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