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The local strained channel (LSC) technique is proposed to provide tensile strained channel in nMOSFETs. However, the device reliability associated with the strained device owing to the strain, and excess hydrogen and nitrogen incorporation from the deposited SiN layer is an imminent concern. In line with this, the incorporation of a thin LPCVD-TEOS buffer layer to improve the reliability performance...
Thermal stability of AlSiCu/W/n + p diodes with two different W contact structures prepared by selective W chemical vapour deposition (W-CVD), was first investigated. The diodes with the self-aligned W-contacted structure were able to sustain a 30 min furnace annealing up to 500 °C without degradation of electrical characteristics. The diodes with the contact-hole W-contacted structure were...
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