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We simulate room temperature capacitance-voltage characteristics of silicon (Si) nanowire gate-all-around MOS structures with radius les 10 nm using a self-consistent Schrodinger- Poisson solver in cylindrical coordinates with full treatment of the transverse quantum confinement. In this paper, we compare our simulation results with the latest capacitance measurements on single Si nanowire pMOS and...
In this work the charge-based capacitance measurement (CBCM) method has been extended and calibrated to measure sub-fF level bias-dependent capacitance of single channel silicon nanowire (SNW) transistors. Mixed mode simulations are used to establish the efficacy of the method. Test keys have been carefully designed and fabricated on-chip so that C-V and I-V characteristics are measured on the same...
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