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Threshold voltage and drain current instabilities in state-of-the-art 4H-SiC MOSFETs with thermal as-grown SiO2 and NO-annealed gate oxides have been studied using fast I-V measurements. These measurements reveal the full extent of the instability underestimated by dc measurements. Furthermore, fast measurements allow the separation of negative and positive bias stress effects. Postoxidation annealing...
The results show that devices with "as grown" SiO2 have a much higher density of bulk oxide traps than devices after post oxidation annealing in NO environment. The amount of oxide fixed charge is clearly not affected by the annealing process. Devices fabricated on ion-implanted channels exhibit only a small increase in the bulk oxide trap density and the fixed charge. On the other hand,...
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